Novel U-shape resistive random access memory structure for improving resistive switching characteristics
Bibliographic Information
- Other Title
-
- Novel U shape resistive random access memory structure for improving resistive switching characteristics
- Special issue: Solid state devices and materials
- Special issue Solid state devices and materials
Search this article
Journal
-
- Japanese journal of applied physics : JJAP
-
Japanese journal of applied physics : JJAP 50 (4), 2011-04
Tokyo : The Japan Society of Applied Physics
- Tweet
Details 詳細情報について
-
- CRID
- 1520572357550840832
-
- NII Article ID
- 40018800962
-
- NII Book ID
- AA12295836
-
- ISSN
- 00214922
-
- NDL BIB ID
- 11076329
-
- Text Lang
- en
-
- NDL Source Classification
-
- ZM35(科学技術--物理学)
-
- Data Source
-
- NDL
- CiNii Articles