Influence of surrounding dielectrics on the data retention time of doped Sb2Te phase change material

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<jats:p> The crystallization properties of as-deposited and laser written amorphous marks of doped Sb<jats:sub>2</jats:sub>Te phase change material are found to be only dependent on the top dielectric layer. A ZnS:SiO<jats:sub>2</jats:sub> top dielectric layer yields a higher crystallization temperature and a larger crystal growth activation energy as compared to a SiO<jats:sub>2</jats:sub> top dielectric layer, leading to superior data retention times at ambient temperatures. The observed correlation between the larger crystallization temperatures and larger crystal growth activation energies indicates that the viscosity of the phase change material in the amorphous state is dependent on the interfacial energy between the phase change material and the top dielectric layer. </jats:p>

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