Shottky Barrier Diodes on AlN Free-Standing Substrates
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<jats:p> Lateral Schottky rectifiers were fabricated on bulk single-crystal free-standing AlN substrates. The unintentionally doped substrates display n-type conductivity. The diode shows a low reverse leakage current of ∼0.1 nA at -40 V at room temperature. The ideality factor for forward characteristics is 11.7 at room temperature and shows temperature dependence, suggesting the lateral nonuniformities at the metal/semiconductor interface. The fabricated devices are stably operated even at 573 K, owing to the wide band gap (6.2 eV) of AlN. The reverse leakage current of the device is explained by either a trap-assisted tunneling process or one-dimensional variable-range-hopping conduction along the dislocations. </jats:p>
収録刊行物
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 51 (4), 040206-, 2012-04
Tokyo : The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1520572357750345472
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- NII論文ID
- 40019230906
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- NII書誌ID
- AA12295836
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- ISSN
- 00214922
- 13474065
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- NDL書誌ID
- 023587494
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- 本文言語コード
- en
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- NDL 雑誌分類
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- ZM35(科学技術--物理学)
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- データソース種別
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- NDL
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