Direct probing of carrier behavior in electroluminescence indium-zinc-oxide/N,N'-di-〔(1-naphthyl)-N,N'-diphenyl〕-(1,1'-biphenyl)-4,4'-diamine/tris(8-hydroxy-quinolinato)aluminum(3)/LiF/Al diode by time-resolved optical second-harmonic generation

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Direct probing of carrier behavior in electroluminescence indium zinc oxide N N di 1 naphthyl N N diphenyl 1 1 biphenyl 4 4 diamine tris 8 hydroxy quinolinato aluminum 3 LiF Al diode by time resolved optical second harmonic generation
Special issue: Solid state devices and materials
Special issue Solid state devices and materials

Japanese journal of applied physics : JJAP

Japanese journal of applied physics : JJAP 50 (4), 2011-04

Tokyo : The Japan Society of Applied Physics