Impact of the Use of Xe on Electrical Properties in Magnetron-Sputtering Deposited Amorphous InGaZnO Thin-Film Transistors

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Abstract

<jats:p>The use of heavier noble gases such as Xe instead of the lighter Ar during the magnetron sputtering deposition of amorphous indium–gallium–zinc oxide films is introduced to the fabrication of their thin-film transistors. Higher mobility in the Xe case is observed; typically, the saturation-region field-effect mobility is increased from ∼10 cm<jats:sup>2</jats:sup>V<jats:sup>-1</jats:sup>s<jats:sup>-1</jats:sup>in the Ar case to ∼13 cm<jats:sup>2</jats:sup>V<jats:sup>-1</jats:sup>s<jats:sup>-1</jats:sup>in the Xe case. The Hall mobility is also higher in the Xe case in the carrier density range of approximately 10<jats:sup>17</jats:sup>–10<jats:sup>18</jats:sup>cm<jats:sup>-3</jats:sup>. These results suggest that the Xe sputtering can reduce film damage, and improve film quality.</jats:p>

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