Positive bias instability of bottom-gate zinc oxide thin-film transistors with a SiOx/SiNx-stacked gate insulator
書誌事項
- タイトル別名
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- Positive bias instability of bottom gate zinc oxide thin film transistors with a SiOx SiNx stacked gate insulator
- Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials
- Special issue Active matrix flatpanel displays and devices TFT technologies and FPD materials
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収録刊行物
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 50 (3), 2011-03
Tokyo : The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1520572358362961152
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- NII論文ID
- 40018777958
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- NII書誌ID
- AA12295836
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- ISSN
- 00214922
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- NDL書誌ID
- 11054273
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- 本文言語コード
- en
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- NDL 雑誌分類
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- ZM35(科学技術--物理学)
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- データソース種別
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- NDL
- CiNii Articles