High speed phase change random access memory with (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1 complete solid solution

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High speed phase change random access memory with Ge1Sb2Te4 0 9 Sn1Bi2Te4 0 1 complete solid solution

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 46 (9A), 5719-5723, 2007-09

Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics