Experimental study of physical-vapor-deposited titanium nitride gate with An n[+]-polycrystalline silicon capping layer and its application to 20nm fin-type double-gate metal-oxide-semiconductor field-effect transistors

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Experimental study of physical vapor deposited titanium nitride gate with An n polycrystalline silicon capping layer and its application to 20nm fin type double gate metal oxide semiconductor field effect transistors
Special issue: Solid state devices and materials
Special issue Solid state devices and materials

Japanese journal of applied physics : JJAP

Japanese journal of applied physics : JJAP 50 (4), 2011-04

Tokyo : The Japan Society of Applied Physics