Epitaxial lateral overgrowth of gallium nitride for embedding the micro-mirror array

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  • Epitaxial lateral overgrowth of gallium nitride for embedding the micro mirror array
  • Special issue: Solid state devices and materials
  • Special issue Solid state devices and materials

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<jats:p> We report here details of the epitaxial lateral overgrowth (ELOG) process for embedding a Ta<jats:sub>2</jats:sub>O<jats:sub>5</jats:sub>/SiO<jats:sub>2</jats:sub> multilayer high reflector micro-mirror array (MMA) in the GaN. The process was aiming for purpose of applying the MMA on the micro-light emitting diode (micro-LED) for light extraction enhancement of the micro-LED. A two-step ELOG process with different temperature and pressure to achieve high lateral growth rate and low vertical growth rate was implemented and the two-step ELOG process was followed by a slow growth rate process to complete embedding the MMA. </jats:p>

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