Source/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors: raised source/drain with in situ doping for series resistance reduction

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  • Source drain engineering for In0 7Ga0 3As N channel metal oxide semiconductor field effect transistors raised source drain with in situ doping for series resistance reduction
  • Special issue: Solid state devices and materials
  • Special issue Solid state devices and materials

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