Structure, Materials and Shape Optimization of Magnetic Tunnel Junction Devices: Spin-Transfer Switching Current Reduction for Future Magnetoresistive Random Access Memory Application

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Structure Materials and Shape Optimization of Magnetic Tunnel Junction Devices Spin Transfer Switching Current Reduction for Future Magnetoresistive Random Access Memory Application
Selected Topics in Applied Physics(4)Magnetization Dynamics in Spintronic Structures and Devices
Selected Topics in Applied Physics 4 Magnetization Dynamics in Spintronic Structures and Devices

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 45 (5A), 3835-3841, 2006-05

Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics