Shallow carrier trap levels in GaAsN investigated by photoluminescence

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  • Special issue: Solid state devices and materials
  • Special issue Solid state devices and materials

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<jats:p>Shallow carrier trap levels in GaAs<jats:sub>1-<jats:italic>x</jats:italic></jats:sub>N<jats:sub><jats:italic>x</jats:italic></jats:sub>(0.0010≤<jats:italic>x</jats:italic>≤0.0038) were investigated by photoluminescence (PL) and photoreflectance (PR) ranging from 4.2 to 300 K. The band gap energies of the GaAsN were clearly determined in the whole temperature range by the PR fitting analysis. It is clarified by peak decomposing that there were three emission peaks in the near-band-edge PL spectra of GaAsN. One of them was originated from band-to-band transition. The energies of two emission peaks were located at approximately 6 and 17 meV below the band edge. The existence of these peaks is evidence of carrier localization at the near-band-edge. The intensity ratio of the peak at the low energy side to other peaks increases with increasing N composition. This behavior is similar to the degradation of electrical properties.</jats:p>

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