Schottky Source/Drain InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance
Bibliographic Information
- Other Title
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- Special Issue : Solid State Devices and Materials (2)
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Journal
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 51 (4), 2012-04
Tokyo : The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1520853832520940800
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- NII Article ID
- 40019231507
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- NII Book ID
- AA12295836
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- ISSN
- 00214922
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- NDL BIB ID
- 023588355
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles
