Indium Doped nMOSFETs and Buried Channel pMOSFETs with n+ Polysilicon Gate
Bibliographic Information
- Other Title
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- Indium Doped nMOSFETs and Buried Channe
- Solid State Devices and Materials
- Solid State Devices and Materials
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Abstract
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
Journal
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- Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
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Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 36 (3B), 1341-1345, 1997-03
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
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Details 詳細情報について
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- CRID
- 1520853832616509056
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- NII Article ID
- 110003946798
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- NII Book ID
- AA10457675
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- ISSN
- 00214922
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- NDL BIB ID
- 4196623
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles