Entirely crack-free ultraviolet GaN/AlGaN laser diodes grown on 2-in. sapphire substrate
Bibliographic Information
- Other Title
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- Entirely crack free ultraviolet GaN AlGaN laser diodes grown on 2 in sapphire substrate
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Abstract
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
Journal
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- Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
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Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 46 (9A), 5782-5784, 2007-09
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1520853832811265152
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- NII Article ID
- 40015602589
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- NII Book ID
- AA10457675
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- ISSN
- 00214922
- 13474065
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- NDL BIB ID
- 8909378
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
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- CiNii Articles