Light output power enhancement of GaN-based light emitting diodes with periodic deflector embedded on the wet etch patterned sapphire substrate

DOI Web Site Web Site Web Site 16 References

Bibliographic Information

Other Title
  • Light output power enhancement of GaN based light emitting diodes with periodic deflector embedded on the wet etch patterned sapphire substrate

Search this article

Abstract

<jats:p> In this work, light-emitting diodes (LEDs) are fabricated with periodic deflector embedded (PDE) on the wet etch patterned sapphire substrate (PSS). A wet etching technique is employed to form the PDE-PSS structures. The performance of the PDE and PDE-PSS LEDs were compared with the conventional LEDs. The light output power of the PDE and PDE-PSS LEDs were enhanced by the factor of 40 and 60%, respectively, compared to that obtained from conventional LEDs. The light trajectories that are guided along the epilayer in the LEDs can be extracted by the helps of periodic deflectors as well as a typical PSS structure. </jats:p>

Journal

References(16)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top