Effect of Interdot Coulomb Repulsion on Charge Transport of Parallel Two Single-Electron Transistors

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Effect of Interdot Coulomb Repulsion on Charge Transport of Parallel Two Single Electron Transistors

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 45 (4A), 2881-2887, 2006-04

Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics