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Influence of stacking sequences and lattice parameter differences on the microstructure of nonpolar AlN films grown on (1120) 6H-SiC by plasma-assisted molecular beam epitaxy
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Description
資料形態 : テキストデータ プレーンテキスト
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
Journal
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 49 (4), 040201-, 2010-04
Tokyo : The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1520853833061448320
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- NII Article ID
- 40017085027
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- NII Book ID
- AA12295836
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- ISSN
- 00214922
- 13474065
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- NDL BIB ID
- 10652779
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL Search
- Crossref
- CiNii Articles
