Selective synthesis of SiC and SiOx nanowires by direct microwave irradiation

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<jats:p> We report a facile and novel method for the selective growth of SiC and SiO<jats:sub> <jats:italic>x</jats:italic> </jats:sub> nanowires by direct microwave irradiation on a Si substrate under atmospheric pressure. Selective synthesis of the amorphous SiO<jats:sub> <jats:italic>x</jats:italic> </jats:sub> or crystalline SiC nanowires was achieved by varying the gas composition in the reactor. The proposed method requires a short reaction time (2 min) with no need for vacuum equipment because the reaction is carried out under atmospheric pressure. High-resolution transmission electron microscope images revealed that the SiO<jats:sub> <jats:italic>x</jats:italic> </jats:sub> nanowires were amorphous and that the SiC nanowires were crystalline. Raman spectra showed features typical of nano-sized SiC. On the basis of our results, we propose a growth mechanism of SiC and SiO<jats:sub> <jats:italic>x</jats:italic> </jats:sub> nanowires synthesized by direct microwave irradiation. </jats:p>

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