Large memory effect and high carrier mobility of organic field-effect transistors using semiconductor colloidal nano-dots dispersed in polymer buffer layers
書誌事項
- タイトル別名
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- Large memory effect and high carrier mobility of organic field effect transistors using semiconductor colloidal nano dots dispersed in polymer buffer layers
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<jats:p> We fabricated organic memory field-effect transistors (FETs) using PbS colloidal nano-dots (NDs) dispersed in thin poly(methyl methacrylate) (PMMA) layers inserted between gate insulators (SiO<jats:sub>2</jats:sub>) and pentacene active layers as floating gates. The colloidal NDs were dispersed in chloroform solution with PMMA, and spin-coated on SiO<jats:sub>2</jats:sub> surfaces. The fabricated memory FETs showed significantly large threshold voltage shifts of 64.5 V at maximum after a writing voltage of 100 V was applied to their control gates, and a maximum carrier mobility of 0.36 cm<jats:sup>2</jats:sup> V<jats:sup>-1</jats:sup> s<jats:sup>-1</jats:sup>, which was comparable to that of reference pentacene FETs without colloidal NDs, was obtained because of the improved crystallinity of the pentacene films. </jats:p>
収録刊行物
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 50 (2), 021601-, 2011-02
Tokyo : The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1520853833409342976
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- NII論文ID
- 40018283299
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- NII書誌ID
- AA12295836
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- ISSN
- 00214922
- 13474065
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- NDL書誌ID
- 10981671
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- 本文言語コード
- en
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- NDL 雑誌分類
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- ZM35(科学技術--物理学)
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- データソース種別
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- NDL
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