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Photoluminescence studies of Mg-doped AlxGa1-xAs epitaxial layers grown by molecular beam epitaxy
Bibliographic Information
- Other Title
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- Photoluminescence studies of Mg doped AlxGa1 xAs epitaxial layers grown by molecular beam epitaxy
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Description
資料形態 : テキストデータ プレーンテキスト
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
Journal
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 48 (4), 041103-, 2009-04
Tokyo : The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1520853834049933056
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- NII Article ID
- 40016559579
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- NII Book ID
- AA12295836
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- ISSN
- 00214922
- 13474065
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- NDL BIB ID
- 10210978
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL Search
- Crossref
- CiNii Articles