Improved resistive switching properties of solution-processed TiOx film by incorporating atomic layer deposited TiO2 layer

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  • Improved resistive switching properties of solution processed TiOx film by incorporating atomic layer deposited TiO2 layer

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<jats:p>Resistive switching characteristics of bilayered titanium oxides layer were investigated. To improve the relatively poor electrical characteristics of solution-processed TiO<jats:sub><jats:italic>x</jats:italic></jats:sub>active layers, we incorporated an additional thin TiO<jats:sub>2</jats:sub>(∼8 nm) layer by atomic layer deposition. The bilayered titanium oxide active layer showed a significantly improved performance, such as a larger ON/OFF ratio, a stable resistive switching over 100 times under a dc voltage sweep, cell-to-cell uniformity, and high device yield (>90%). These improved properties can be explained by the transition of the resistive switching mechanism from filamentary switching through the defective side in solution-processed TiO<jats:sub><jats:italic>x</jats:italic></jats:sub>to interfacial switching resulting from the oxygen ion migration between two active layers.</jats:p>

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