Simulation analysis of quantum confinement and short-channel effects in independent double-gate metal-oxide-semiconductor fieldeffect transistors
Bibliographic Information
- Other Title
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- Simulation analysis of quantum confinement and short channel effects in independent double gate metal oxide semiconductor fieldeffect transistors
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Abstract
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
Journal
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 47 (9), 7013-7018, 2008-09
Tokyo : The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1520853834284644864
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- NII Article ID
- 40016294905
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- NII Book ID
- AA12295836
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- ISSN
- 00214922
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- NDL BIB ID
- 9651939
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles
