High-performance p-channel diamond metal-oxide-semiconductor field-effect transistors on H-terminated (111) surface
Bibliographic Information
- Other Title
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- High performance p channel diamond metal oxide semiconductor field effect transistors on H terminated 111 surface
Search this article
Journal
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- Applied physics express : APEX
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Applied physics express : APEX 3 (4), 2010-04
Tokyo : Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1521136279879129728
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- NII Article ID
- 10027014309
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- NII Book ID
- AA12295133
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- ISSN
- 18820778
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- NDL BIB ID
- 10652745
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles
