Growth and Chractertics of GaN Film on Thin AlN/(0001) Sapphire Template Layer via Direct Reaction of Gallium and Ammonia
Bibliographic Information
- Other Title
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- Growth and Chractertics of GaN Film on Thin AlN 0001 Sapphire Template Layer via Direct Reaction of Gallium and Ammonia
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Journal
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- Japanese journal of applied physics. Part 2, Letters & express letters
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Japanese journal of applied physics. Part 2, Letters & express letters 45 (24-28), L697-700, 2006-07
Tokyo : Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1521136280203562112
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- NII Article ID
- 10017653514
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- NII Book ID
- AA11906093
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- ISSN
- 00214922
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- NDL BIB ID
- 7989413
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles
