Formation of Minibands on Superlattice Structure with Periodically Arranged δ-Doped Nitrogen into GaAs
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説明
Using molecular beam epitaxy, we fabricate a superlattice structure having periodically arranged δ-doped nitrogen within GaAs. X-ray diffraction indicates the formation of regularly arranged 0.1 ML δ-doped nitrogen having a certain dispersion every 3.7 nm, multilayered up to 10 periods. Optical transition energies obtained from photoreflectance reflect the number of superlattice periods. That suggests the formation of minibands in the short-period GaAsN/GaAs quantum wells, as well as the dispersed distribution of the nitrogen about ~7 ML as also predicted from transmission electron microscopy.
収録刊行物
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- Applied physics express : APEX
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Applied physics express : APEX 6 (4), 041002-, 2013-04
Tokyo : Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1521136280301964416
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- NII論文ID
- 10031166395
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- NII書誌ID
- AA12295133
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- ISSN
- 18820778
- 18820786
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- NDL書誌ID
- 024433998
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- 本文言語コード
- en
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- NDL 雑誌分類
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- ZM35(科学技術--物理学)
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- データソース種別
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