Junctionless Ge p-channel metal-oxide-semiconductor field-effect transistors fabricated on ultrathin Ge-on-insulator substrate
Bibliographic Information
- Other Title
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- Junctionless Ge p channel metal oxide semiconductor field effect transistors fabricated on ultrathin Ge on insulator substrate
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Journal
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- Applied physics express : APEX
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Applied physics express : APEX 4 (3), 2011-03
Tokyo : Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1521136280800304384
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- NII Article ID
- 10028155151
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- NII Book ID
- AA12295133
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- ISSN
- 18820778
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- NDL BIB ID
- 11054056
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles