Surface Passivation of GaSb(100) Using Molecular Beam Epitaxy of Y₂O₃ and Atomic Layer Deposition of Al₂O₃ : A Comparative Study

Details 詳細情報について

• CRID

  1521136280996598400

• NII Article ID

  40019923224

• NII Book ID

  AA12295133

• ISSN

  18820778

• NDL BIB ID

  025108258

• Web Site

  http://id.ndl.go.jp/bib/025108258

  https://ndlsearch.ndl.go.jp/books/R000000004-I025108258

• Text Lang

  en

• NDL Source Classification

  • ZM35(科学技術--物理学)

• Data Source

  • NDL
  • CiNii Articles