Effect of electron leakage on efficiency droop in wide-well InGaN-based light-emitting diodes
Bibliographic Information
- Other Title
-
- Effect of electron leakage on efficiency droop in wide well InGaN based light emitting diodes
Search this article
Journal
-
- Applied physics express : APEX
-
Applied physics express : APEX 4 (1), 012106-, 2011-01
Tokyo : Japan Society of Applied Physics
- Tweet
Details 詳細情報について
-
- CRID
- 1521699229658744064
-
- NII Article ID
- 10027782346
-
- NII Book ID
- AA12295133
-
- ISSN
- 18820778
- 18820786
-
- NDL BIB ID
- 10947925
-
- Text Lang
- en
-
- NDL Source Classification
-
- ZM35(科学技術--物理学)
-
- Data Source
-
- NDL
- Crossref
- CiNii Articles
