Improvement of Metal-Oxide Semiconductor Interface Caracteristics in Complementary Metal-Oxide Semiconductor on Si(111) by Combination of Fluorine Implantation and Long-Time Hydrogen Annealing
Bibliographic Information
- Other Title
-
- Improvement of Metal Oxide Semiconductor Interface Caracteristics in Complementary Metal Oxide Semiconductor on Si 111 by Combination of Fluorine Implantation and Long Time Hydrogen Annealing
Search this article
Journal
-
- Japanese journal of applied physics. Part 2, Letters & express letters
-
Japanese journal of applied physics. Part 2, Letters & express letters 45 (4-7), L108-110, 2006
Tokyo : Japan Society of Applied Physics
- Tweet
Keywords
Details 詳細情報について
-
- CRID
- 1522262180556483584
-
- NII Article ID
- 10018158776
-
- NII Book ID
- AA11906093
-
- ISSN
- 00214922
-
- NDL BIB ID
- 7821822
-
- Text Lang
- en
-
- NDL Source Classification
-
- ZM35(科学技術--物理学)
-
- Data Source
-
- NDL
- CiNii Articles
