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説明
Strain engineering is one of the key technologies for using graphene as an electronic device: the strain-induced pseudo-gauge field reflects Dirac electrons, thus opening the so-called conduction gap. Since strain accumulates in constrictions, graphene nanoconstrictions can be a good platform for this technology. On the other hand, in the graphene nanoconstrictions, Fabry-Perot type quantum interference dominates the electrical conduction at low bias voltages. We argue that these two effects have different strain dependence; the pseudo-gauge field contribution is symmetric with respect to positive (tensile) and negative (compressive) strain, whereas the quantum interference is antisymmetric. As a result, a peculiar strain dependence of the conductance appears even at room temperatures.
4 pages, 3 figures
収録刊行物
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- Journal of the Physical Society of Japan
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Journal of the Physical Society of Japan 90 (2), 023701-, 2021-02
Tokyo : Physical Society of Japan
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詳細情報 詳細情報について
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- CRID
- 1522262180922109824
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- NII論文ID
- 40022484931
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- NII書誌ID
- AA00704814
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- ISSN
- 00319015
- 13474073
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- NDL書誌ID
- 031282276
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- 本文言語コード
- en
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- NDL 雑誌分類
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- ZM35(科学技術--物理学)
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- データソース種別
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