Intensity autocorrelation measurement of 400 nm picosecond optical pulses from a GaInN mode-locked semiconductor laser diode using surface second harmonic generation of β-BaB2O4 crystal
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- Intensity autocorrelation measurement of 400 nm picosecond optical pulses from a GaInN mode locked semiconductor laser diode using surface second harmonic generation of v BaB2O4 crystal
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説明
We developed an intensity autocorrelation measurement technique using the surface second harmonic generation (SHG) of a β-BaB2O4 crystal to characterize picosecond optical pulses at 402 nm from a GaInN mode-locked semiconductor laser diode (MLLD). This technique enabled us to precisely evaluate the pulse width at 402 nm, and the shortest pulse width of 1.6 ps was achieved from the GaInN MLLD operating under a reverse bias voltage of -25 V applied to a saturable absorber.
収録刊行物
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- Applied physics express : APEX
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Applied physics express : APEX 3 (12), 122701-, 2010-12
Tokyo : Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1522825130670161664
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- NII論文ID
- 10027618482
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- NII書誌ID
- AA12295133
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- ISSN
- 18820778
- 18820786
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- NDL書誌ID
- 10926636
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- 本文言語コード
- en
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- NDL 雑誌分類
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- ZM35(科学技術--物理学)
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