Control of Mg content and carrier concentration via post annealing under different Mg pressures for Sb-doped Mg₂Si thermoelectric material

Details 詳細情報について

• CRID

  1522825131022275584

• NII Article ID

  40022066657

• NDL BIB ID

  030077682

• Web Site

  http://id.ndl.go.jp/bib/030077682

  https://ndlsearch.ndl.go.jp/books/R000000004-I030077682

• Text Lang

  en

• NDL Source Classification

  • ZP33(科学技術--繊維工学・工業)

• Data Source

  • NDL Search
  • CiNii Articles