Raman spectroscopic stress evaluation of femtosecond-laser-modified region inside 4H-SiC

DOI Web Site Web Site 2 Citations 22 References

Bibliographic Information

Other Title
  • Raman spectroscopic stress evaluation of femtosecond laser modified region inside 4H SiC

Search this article

Description

A femtosecond (fs)-laser-modified region inside single-crystal silicon carbide was studied by micro-Raman spectroscopy. Higher and lower peak energy shifts of the transverse optical (TO) phonon mode, which correspond to compressive and tensile stresses, were observed. Mappings of peak energies and spectral widths of the TO phonon mode showed a clear correspondence with the distributions of strained layers observed by transmission electron microscopy. The maximum compressive and tensile stresses were estimated to be 1.4 and 0.4 GPa, respectively. This result indicates that the periodic strained layers contain many nano-voids which are formed by nano-explosions induced by fs laser irradiation.

Journal

Citations (2)*help

See more

References(22)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top