Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds
Search this article
Journal
-
- Applied physics express : APEX
-
Applied physics express : APEX 6 (7), 075504-, 2013-07
Tokyo : Japan Society of Applied Physics
- Tweet
Details 詳細情報について
-
- CRID
- 1523106605624981632
-
- NII Article ID
- 10031187909
-
- NII Book ID
- AA12295133
-
- ISSN
- 18820778
- 18820786
- http://id.crossref.org/issn/18820786
-
- NDL BIB ID
- 024706474
-
- Text Lang
- en
-
- NDL Source Classification
-
- ZM35(科学技術--物理学)
-
- Data Source
-
- NDL
- Crossref
- CiNii Articles