Temperature Dependence of Highly Excited Exciton Polaritons in Semiconductor Microcavities

DOI DOI Web Site Web Site 11 Citations 33 References Open Access

Search this article

Description

Observations of polariton condensation in semiconductor microcavities suggest that polaritons can be exploited as a novel type of laser with low input-power requirements. The low-excitation regime is approximately equivalent to thermal equilibrium, and a higher excitation results in more dominant nonequilibrium features. Although standard photon lasing has been experimentally observed in the high excitation regime, e-h pair binding can still remain even in the high-excitation regime theoretically. Therefore, the photoluminescence with a different photon lasing mechanism is predicted to be different from that with a standard photon lasing. In this paper, we report the temperature dependence of the change in photoluminescence with the excitation density. The second threshold behavior transited to the standard photon lasing is not measured at a low-temperature, high-excitation power regime. Our results suggest that there may still be an electron--hole pair at this regime to give a different photon lasing mechanism.

25 pages, 11 figures, to appear in J. Phys. Soc. Jpn

Journal

Citations (11)*help

See more

References(33)*help

See more

Related Projects

See more

Keywords

Details 詳細情報について

Report a problem

Back to top