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Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance
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Journal
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- Applied physics express : APEX
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Applied physics express : APEX 4 (11), 114102-, 2011-11
Tokyo : Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1523106605833471488
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- NII Article ID
- 10030153581
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- NII Book ID
- AA12295133
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- ISSN
- 18820778
- 18820786
- http://id.crossref.org/issn/18820786
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- NDL BIB ID
- 023321245
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL Search
- Crossref
- CiNii Articles