Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance

Details 詳細情報について

• CRID

  1523106605833471488

• NII Article ID

  10030153581

• NII Book ID

  AA12295133

• ISSN

  18820778

  18820786

  http://id.crossref.org/issn/18820786

• DOI

  10.1143/apex.4.114102

• NDL BIB ID

  023321245

• Web Site

  http://id.ndl.go.jp/bib/023321245

  https://ndlsearch.ndl.go.jp/books/R000000004-I023321245

  http://stacks.iop.org/1882-0786/4/i=11/a=114102/pdf

• Text Lang

  en

• NDL Source Classification

  • ZM35(科学技術--物理学)

• Data Source

  • NDL Search
  • Crossref
  • CiNii Articles