Silicon Oxide Deposition into a Hole Using a Focused Ion Beam : Focused Ion Beam Process :

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説明

Focused ion beam (FIB)-induced deposition of silicon oxide in terms of filling a hole is reported. It was found that a vacant space was formed when an ion beam was simply scanned through the hole area. To investigate the mechanism to form the vacancy, deposition on the sample, which has a step with a height of 0.8μm, was carried out by using a Si^<2+> and a Be^<2+> ion beam. An extruded deposit resembling a pent roof was observed from the step ridge. The mechanism of the pent roof growth on the steplike sample was considered and the vacancy formation in the hole can be explained by the same mechanism. For silicon oxide, the high growth rate of the extruded deposit is thought to be the key to the vacancy formation. A useful way is proposed to fill the hole with silicon oxide with almost no vacancy.

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  • JJAP series

    JJAP series 5 321-324, 1992-04-30

    Japanese Journal of Applied Physics

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