Phase Coherence Length in Planar Doped Thin GaAs Wires Fabricated by Ion Beam Etching : Microfabrication and Physics :

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  • TANIGUCHI,Hiroaki
    Department of Electrical Engineering, Faculty of Engineering Sciense, Osaka University
  • NAGOYA,Tasuku
    Department of Electrical Engineering, Faculty of Engineering Sciense, Osaka University
  • TAKAGAKI,Yukihiko
    Department of Electrical Engineering, Faculty of Engineering Sciense, Osaka University
  • YUBA,Yoshihiko
    Department of Electrical Engineering, Faculty of Engineering Sciense, Osaka University
  • TAKAOKA,Sadao
    Department of Physics, Faculty of Science, Osaka University
  • GAMO,Kenji
    Department of Electrical Engineering, Faculty of Engineering Sciense, Osaka University:Research Center for Extreme Materials, Osaka University
  • MURASE,Kazuo
    Department of Physics, Faculty of Science, Osaka University
  • NAMBA,Susumu
    Department of Electrical Engineering, Faculty of Engineering Sciense, Osaka University:Research Center for Extreme Materials, Osaka University

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説明

Electrical transport properties have been studied in film and wires fabricated from a monolayer doped or a homogeneously doped thin GaAs by mesa etching techniques. The dependence of the electron wave coherency upon the wire widths and fabrication processes is investigated from their low-temperature behavior of the phase coherence length L_φ derived from the negative magneroresistance and the amplitude of the conductance fluctuations. Low-temperature saturations of L_φ occur only in narrow wires. This suggests that L_φ is affected by the ion beam induced damage within the mesa side walls. A difference in L_φ between reactive ion-beam-etched and ion-milled wires is explained by the decrease of the diffusion constant. The corresponding difference in the conductance fluctuation amplitudes is larger than that expected from the difference in L_φ.

収録刊行物

  • JJAP series

    JJAP series 4 300-304, 1991-01-31

    Japanese Journal of Applied Physics

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