SOI Formation Using Lateral Solid-Phase Epitaxy Induced by Focused Ion Beam : Beam Induced Physics and Chemistry :

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説明

Silicon films on insulator (SOI) were formed by using the lateral solid-phase epitaxy(L-SPE) induced by a pseudolinear Si ion beam formed by scanning a point-focused beam at 10 kHz. It was found from SEM observations that in order to obtain long L-SPE regions, the sweep speed of the beam from the seed to SOI regions should not exceed the growth rate of L-SPE enhanced by the beam, It is also shown that the density of crystalline nuclei originally existing in amorphous films should be at a sufficiently low level. The temperature dependence of the L-SPE length was investigated.

収録刊行物

  • JJAP series

    JJAP series 3 325-329, 1989-12-30

    Japanese Journal of Applied Physics

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