50-nm Metal Line Fabrication by Focused Ion Beam and Oxide Resists : Focused Ion Beam Process :

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Ultrafine patterning of refractory metals has been studied by the use of focused ion beam (FIB) and oxide resists. Thin amorphous films of MoO_3 and WO_3 Were deposited by electron beam evaporation onto Si wafers, and were exposed to a 50 keV Ga+ FIB. Developed resist patterns were directly reduced to Mo and W by heat treatment in H_2 gas atmosphere. The linewidth before and after reduction was measured as a function of the line dose. It is demonstrated that from a bilayer resist MoO_3 /WO_3, a 50 nm refractory metal line can be controllably fabricated without any other complicated Processes. Some information about the electrical properties of the reduced patterns is also presented.

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  • JJAP series

    JJAP series 5 329-332, 1992-04-30

    Japanese Journal of Applied Physics

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