Self-Sharpening Effect of Phase Change Erasable Media : Media :

  • YOSHIDA,Tomio
    Information Equipment Research Laboratory, Matsushita Electric Industrial Co., LTD.
  • AKAHIRA,Nobuo
    Information Equipment Research Laboratory, Matsushita Electric Industrial Co., LTD.
  • OHARA,Shunji
    Information Equipment Research Laboratory, Matsushita Electric Industrial Co., LTD.
  • NICHIUCHI,Kenichi
    Information Equipment Research Laboratory, Matsushita Electric Industrial Co., LTD.
  • ISHIDA,Takashi
    Information Equipment Research Laboratory, Matsushita Electric Industrial Co., LTD.

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説明

The characteristics of single-beam one-pass overwrite of SbTeGe phase change erasable (PCE) optical disks have been studied from a drive design point of view. In the recording process, an amorphous mark surrounded by a crystal ring (erase state) is recorded. The amorphous mark always has a clear edge even if erasability is relatively low in the low erase power area. We call this phenomenon the self-sharpening effect (SSE) which gives several advantages to the performance and design of the drive. SSE realizes wide power tolerance in a practical drive, which results in excellent interchangeability in terms of write/erase laser power. SSE also achieves a good off-track performance of less than +/-0.1μm of the optical beam and enables pulse edge recording even if overwrite erasability is relatively low.

収録刊行物

  • JJAP series

    JJAP series 6 83-88, 1992-03-31

    Japanese Journal of Applied Physics

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