In-Line Monitoring of Some Planarization Processes : Inspection and Testing :

NDLデジタルコレクション
  • TISSIER,A.
    Center National D'etudes des Telecommunications (CNET), Chemin du Vieux Chene
  • TEISSIER,J.F.
    S.E.I.
  • CERRUTI,P.
    Center National D'etudes des Telecommunications (CNET), Chemin du Vieux Chene
  • EYMERY,J.M.
    Center National D'etudes des Telecommunications (CNET), Chemin du Vieux Chene

この論文をさがす

説明

The processes used for the surface planarization of the interleave dielectrics which is one of the major problems of the multilevel interconnection CMOS technology, are becoming increasingly sophisticated. As a consequence, the reproducibility of the total process requires an accurate control of these techniques in order to increase die yields. The DOPED method, developed for a non-contact on-line monitoring of now annealing of BPSG films has been applied to the "cold" planarization techniques implemented in the CNET 0.7μm technology. Results are obtained for TEOS deposition and etchback techniques and SOG total etchback.

収録刊行物

  • JJAP series

    JJAP series 5 413-416, 1992-04-30

    Japanese Journal of Applied Physics

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ