Dependence of Electron Cyclotron Resonance plasma Characteristics on Magnetic Field Profiles : Etching :
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- SAMUKAWA,Seiji
- VLSI Development Division, NEC Corporation
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- NAKAMURA,Tsuyoshi
- Mechatronics Research Laboratory, NEC Corporation
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説明
Electron cyclotron resonance (ECR) plasma generation is influenced by the magnetic field profiles in ECR plasma. when an 875 G equimagnetic field and magnetic field gradient are nonuniform, the nonuniform plasma is generated around the ECR position (875 G position). Uneven plasma discharge causes ion acceleration and disturbs the ion flight directions due to the potential differences in ECR plasma. Therefore, a uniform magnetic field gradient at the ECR position and the flat 875 G equimagnetic field profile are necessary to achieve a precise pattern transfer without microloading effects.
収録刊行物
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- JJAP series
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JJAP series 5 192-198, 1992-04-30
Japanese Journal of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1542543045144586112
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- NII論文ID
- 110003912864
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- NII書誌ID
- AA11020413
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- 本文言語コード
- en
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- データソース種別
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- NDLデジコレ(旧NII-ELS)
- CiNii Articles