High Rate and Low Temperature Deposition of Co–Cr Films by Exposed Pole Magnetron Co-Sputtering System

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説明

Co–Cr films were successfully deposited using the exposed pole (EP) magnetron co-sputtering system, obtaining a larger leakage magnetic field, at a high rate (1400 Å/min) and a low substrate temperature (70°C) for a power density of 7.6 W/cm2. Differences in the radial profiles of film thickness and Co content in the films were as small as 17% and 5 wt.%, respectively within a 70 mm diameter of the films. The target utilization efficiency at the surface is more than 85%. The films have a c-axis orientation of Δθ50=8–10° and a perpendicular magnetization of Ms⊥=550–670 emu/cc and Hc⊥=250–300 Oe to the film plane.

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詳細情報 詳細情報について

  • CRID
    1570009752405604992
  • NII論文ID
    110003929935
  • NII書誌ID
    AA10650595
  • 本文言語コード
    en
  • データソース種別
    • CiNii Articles

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