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Electron Density Dependence of Inversion Layer Mobility Limited by Coulomb Scattering and Surface Roughness Scattering in Si MOSFETs
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- KOGA Junji
- ULSI Research Laboratories, TOSHIBA Corporation
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- TAKAGI Shin-ichi
- ULSI Research Laboratories, TOSHIBA Corporation
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- TORIUMI Akira
- ULSI Research Laboratories, TOSHIBA Corporation
Bibliographic Information
- Other Title
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- Si MOS反転層モビリティにおけるクーロン散乱および表面ラフネス散乱の電子濃度依存性
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Description
The electron density dependence of inversion layer mobility limited by Coulomb scattering and surface roughness scattering was experimentally investigated in Si MOSFETs, and the physical mechanism was discussed. It was demonstrated that the screening effect of Coulomb scattering is significantly different between interface charges and substrate impurities. It was also observed for the first time that μ_<sr> has a weak E_<eff> dependence in MOSFETs with a long roughness correlation length comparable to the electron wavelength.
Journal
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- Technical report of IEICE. SDM
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Technical report of IEICE. SDM 95 (66), 27-33, 1995-05-24
The Institute of Electronics, Information and Communication Engineers
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Details 詳細情報について
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- CRID
- 1570009752535882368
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- NII Article ID
- 110003309722
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- NII Book ID
- AN10013254
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- Text Lang
- ja
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- Data Source
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- CiNii Articles