Pulse-Type Bursting Neuron Model Using Enhancement Mode MOSFETs

  • SAEKI Katsutoshi
    Department of Electronics and Computer Science, College of Science and Technology, Nihon University
  • SEKINE Yoshifumi
    Department of Electronics and Computer Science, College of Science and Technology, Nihon University
  • AIHARA Kazuyuki
    Graduate School of Engineering, The University of Tokyo CREST, Japan Science and Technology Co. (JST)

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説明

A number of studies have recently been made on hardware implementation of a neuron model for applications to information processing functions of neural networks. We previously proposed a pulse-type bursting neuron model using depletion mode MOSFETs (D-MOSFETs). However, because it is difficult to make D-MOSFETs due to a complicated manufacturing process, they are not usually used in IC implementation. In this paper, we discuss a pulse-type bursting neuron model using enhancement mode MOSFETs. As a result, it is shown that our proposed new model exhibits bursting firing, periodical firing, intermittent firing, and so on. Thus it is verified that our model is useful for the CMOS process.

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詳細情報 詳細情報について

  • CRID
    1570291227388323328
  • NII論文ID
    110003220963
  • NII書誌ID
    AA10826283
  • ISSN
    09168524
  • 本文言語コード
    en
  • データソース種別
    • CiNii Articles

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