Gas Phase Reaction Kinetics in Mercury-Photosensitized Decomposition of SiH<SUB>4</SUB>

  • Kamisako Koichi
    Department of Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture & Technology
  • Imai Toshio
    Department of Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture & Technology
  • Tarui Yasuo
    Department of Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture & Technology

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説明

The gas phase reaction in a mercury-sensitized decomposition of SiH4 under usual conditions for photo-CVD of a-Si:H was analyzed by means of mass spectroscopy. Reaction rates, i.e., the decomposition rate of SiH4 and the generation rates of Si2H6 and Si3H8, were measured. The reaction mechanism is summarized in twelve reaction steps, and rate equations were derived to explain substantially the obtained experimental results. Based on the rate equations, some rate constants were evaluated. The effect of H2 dilution of a chemical reaction was also discussed.

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詳細情報 詳細情報について

  • CRID
    1570291227434060416
  • NII論文ID
    110003908188
  • NII書誌ID
    AA10457675
  • 本文言語コード
    en
  • データソース種別
    • CiNii Articles

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