Internal Loss of InGaAsP/InP Buried Crescent (λ=1.3μm) Laser : B-4: LD AND LED-2
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- HIGUCHI Hideyo
- LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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- NAMIZAKI Hirofumi
- LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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- OOMURA Etsuji
- LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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- HIRANO Ryoichi
- LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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- SAKAKIBARA Yasushi
- LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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- SUSAKI Wataru
- LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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- FUJIKAWA Kyoichiro
- LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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収録刊行物
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- Japanese journal of applied physics. Supplement
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Japanese journal of applied physics. Supplement 22 (1), 307-310, 1983-02-28
社団法人応用物理学会
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詳細情報 詳細情報について
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- CRID
- 1570291227510252416
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- NII論文ID
- 110003953995
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- NII書誌ID
- AA10457686
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- ISSN
- 00214922
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- 本文言語コード
- en
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- データソース種別
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- CiNii Articles
