A superior method of eliminating B mode dielectric breakdown failure in gate oxides ulitizing a using charging phenomenon

Bibliographic Information

Other Title
  • チャージアップ現象を利用したゲート酸化膜の耐圧特性の改善

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Abstract

We have developed a new method to reduce B mode dielectric breakdown of gate oxide by means of charge up at near intrinsic dielectric breakdown voltage.The charge is generated by pouring deionized water on a wafer with gate oxide which is placed on a spinchuk in a brush scrubber.The charge up voltage increases with increasing the spin rate and saturates close to intrinsic dielectric breakdown.This charge up can reduce B mode dielectric breakdown,which may be attributed to self-healing of gate oxide.

Journal

  • Technical report of IEICE. SDM

    Technical report of IEICE. SDM 93 (172), 37-42, 1993-07-26

    The Institute of Electronics, Information and Communication Engineers

Keywords

Details 詳細情報について

  • CRID
    1570291227512941952
  • NII Article ID
    110003309874
  • NII Book ID
    AN10013254
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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